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PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
Rev. 01 -- 27 February 2007 Product data sheet
1. Product profile
1.1 General description
800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.
Table 1. Product overview Package NXP PBRN123YK PBRN123YS[1] PBRN123YT
[1]
Type number
JEITA SC-59A SC-43A -
JEDEC TO-236 TO-92 TO-236AB
SOT346 SOT54 SOT23
Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I 10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads
1.4 Quick reference data
Table 2. Symbol VCEO IO Quick reference data Parameter collector-emitter voltage output current PBRN123YK, PBRN123YT PBRN123YS Conditions open base
[1]
Min -
Typ -
Max 40 600 800
Unit V mA mA
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
Quick reference data ...continued Parameter repetitive peak output current PBRN123YK, PBRN123YT tp 1 ms; 0.33 1.54 4.1 2.2 4.55 800 2.86 5 mA k bias resistor 1 (input) bias resistor ratio Conditions Min Typ Max Unit
Table 2. Symbol IORM R1 R2/R1
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2. Pinning information
Table 3. Pin SOT54 1 2 3 input (base) output (collector) GND (emitter)
R1
Pinning Description Simplified outline Symbol
2 1 2 3
001aab347 006aaa145
1
R2
3
SOT54A 1 2 3 input (base) output (collector) GND (emitter)
R1
2 1 2 3
001aab348 006aaa145
1
R2
3
SOT54 variant 1 2 3 input (base) output (collector) GND (emitter)
R1
2 1 2 3
001aab447 006aaa145
1
R2
3
SOT23; SOT346 1 2 3 input (base) GND (emitter) output (collector)
1 2
006aaa144 sym007
3
R1
3 1
R2
2
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
2 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
3. Ordering information
Table 4. Ordering information Package Name PBRN123YK PBRN123YS[1] PBRN123YT
[1]
Type number
Description plastic surface-mounted package; 3 leads
Version SOT346
SC-59A SC-43A -
plastic single-ended leaded (through hole) package; SOT54 3 leads plastic surface-mounted package; 3 leads SOT23
Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5. Marking codes Marking code[1] G7 N123YS *7P Type number PBRN123YK PBRN123YS PBRN123YT
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO output current PBRN123YK, PBRN123YT PBRN123YS IORM repetitive peak output current PBRN123YK, PBRN123YT tp 1 ms; 0.33 800 mA
[1] [2][3] [1]
Conditions open emitter open base open collector
Min -
Max 40 40 5 +22 -5 600 700 800
Unit V V V V V mA mA mA
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
3 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
Table 6. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation PBRN123YK, PBRN123YT Conditions Tamb 25 C
[1] [2] [3]
Min -65 -65
Max 250 370 570 700 150 +150 +150
Unit mW mW mW mW C C C
PBRN123YS Tj Tamb Tstg
[1] [2] [3]
[1]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
600
(1)
006aaa998
Ptot (mW) 400
(2)
(3)
200
0 -75
-25
25
75
125 175 Tamb (C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint
Fig 1. Power derating curves for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236)
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
4 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
800 Ptot (mW) 600
006aaa999
400
200
0 -75
-25
25
75
125 175 Tamb (C)
FR4 PCB, standard footprint
Fig 2. Power derating curve for SOT54 (SC-43A/TO-92)
6. Thermal characteristics
Table 7. Symbol Rth(j-a) Thermal characteristics Parameter Conditions Min Typ Max Unit thermal resistance from junction in free air to ambient PBRN123YK, PBRN123YT
[1] [2] [3]
-
-
500 338 219 179
K/W K/W K/W K/W
PBRN123YS Rth(j-sp) thermal resistance from junction to solder point PBRN123YK, PBRN123YT
[1] [2] [3]
[1]
-
-
105
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
5 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
103 Zth(j-a) (K/W) 102 =1 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0.75
006aab000
1
0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
103 Zth(j-a) (K/W) 102 =1 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0
006aab001
0.75
1
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for collector 1 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
6 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
103 Zth(j-a) (K/W) 102
006aab002
=1 0.50
0.75 0.33
0.20 0.10 10 0.05 0.02 0.01 1 0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values
103 Zth(j-a) (K/W) =1 102 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 1 10-5 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 0.75
006aab003
FR4 PCB, standard footprint
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54 (SC-43A/TO-92); typical values
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
7 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
7. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO ICEO IEBO hFE Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = 30 V; IE = 0 A VCE = 30 V; IB = 0 A VEB = 5 V; IC = 0 A VCE = 5 V; IC = 50 mA VCE = 5 V; IC = 300 mA VCE = 5 V; IC = 600 mA VCE = 5 V; IC = 800 mA VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 2.5 mA IC = 200 mA; IB = 10 mA IC = 500 mA; IB = 10 mA IC = 600 mA; IB = 6 mA IC = 800 mA; IB = 8 mA VI(off) VI(on) R1 R2/R1 Cc off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz VCE = 5 V; IC = 100 A VCE = 0.3 V; IC = 20 mA
[1] [1]
Min 300 500 500 450 0.4 0.5 1.54 4.1 -
Typ 450 750 720 650 25 60 160 270 0.56 0.6 0.8 2.2 4.55 7
Max 100 0.5 0.65 35 85 220 550 1.15 1 1.4 2.86 5 -
Unit nA A mA
[1]
[1]
mV mV mV mV V V V k pF
[1]
[1]
[1]
Pulse test: tp 300 s; 0.02.
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
8 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
104 hFE 103
(1) (2) (3)
006aab022
10-1
006aab023
VCEsat (V)
(1)
102
10-2
(2) (3)
10
1 10-1
1
10
102 IC (mA)
103
10-3 1 10
102 IC (mA)
103
VCE = 5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C
Fig 7. DC current gain as a function of collector current; typical values
1
006aab024
Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values
1
006aab025
VCEsat (V)
VCEsat (V)
10-1
10-1
(1) (2) (3)
(1) (2) (3)
10-2 1 10
102 IC (mA)
103
10-2 1 10
102 IC (mA)
103
IC/IB = 50 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C
IC/IB = 100 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C
Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
9 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
10
006aab026
10
006aab027
VI(on) (V)
VI(off) (V)
1
(1) (2) (3)
1
(1) (2) (3)
10-1 10-1
1
10
102 IC (mA)
103
10-1 10-1
1
10 IC (mA)
102
VCE = 0.3 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C
VCE = 5 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 11. On-state input voltage as a function of collector current; typical values
Fig 12. Off-state input voltage as a function of collector current; typical values
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
10 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
8. Package outline
3.1 2.7 3 0.6 0.2 1.3 1.0 4.2 3.6 0.45 0.38
3.0 1.7 2.5 1.3 4.8 4.4 1 2 0.50 0.35 0.26 0.10 04-11-11 5.2 5.0 Dimensions in mm 14.5 12.7
0.48 0.40 1 2 2.54 3 1.27
1.9 Dimensions in mm
04-11-16
Fig 13. Package outline SOT346 (SC-59A/TO-236)
Fig 14. Package outline SOT54 (SC-43A/TO-92)
0.45 0.38 4.2 3.6 1.27
4.2 3.6
0.45 0.38 0.48 0.40 1
3 max
2.5 max 1
0.48 0.40 2 2.54 3 1.27
4.8 4.4
2 5.08 2.54 3 5.2 5.0 14.5 12.7 04-06-28 5.2 5.0 Dimensions in mm 14.5 12.7 4.8 4.4
Dimensions in mm
05-01-10
Fig 15. Package outline SOT54A
Fig 16. Package outline SOT54 variant
3.0 2.8
3
1.1 0.9
0.45 0.15 2.5 1.4 2.1 1.2
1
2
1.9 Dimensions in mm
0.48 0.38
0.15 0.09 04-11-04
Fig 17. Package outline SOT23 (TO-236AB)
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
11 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
9. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBRN123YK PBRN123YS Package SOT346 SOT54 SOT54A Description 4 mm pitch, 8 mm tape and reel bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch SOT54 variant bulk, delta pinning PBRN123YT
[1]
Packing quantity 3000 -115 -215 5000 -412 -112 10000 -135 -116 -126 -235
SOT23
4 mm pitch, 8 mm tape and reel
For further information and the availability of packing methods, see Section 13.
10. Soldering
3.30 1.00 0.70 (3x) 0.60 (3x) 0.70 (3x) 3 3.15 1.55 0.95 1 2 0.95 3.40
1.20 2.60 2.90 solder lands solder paste solder resist occupied area
sot346
Dimensions in mm
Fig 18. Reflow soldering footprint SOT346 (SC-59A/TO-236)
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
12 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
4.70 2.80
solder lands solder resist occupied area
Dimensions in mm
3
5.20 4.60 1.20
1
2
sot346
1.20 (2x) 3.40 preferred transport direction during soldering
Fig 19. Wave soldering footprint SOT346 (SC-59A/TO-236)
2.90 2.50
0.85 3.00 0.85 1.30
2
1
solder lands
2.70
3
solder resist
solder paste
occupied area
0.60 (3x)
Dimensions in mm
0.50 (3x) 0.60 (3x) 1.00 3.30
sot023
Fig 20. Reflow soldering footprint SOT23 (TO-236AB)
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
13 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
3.40 1.20 (2x)
solder lands solder resist occupied area
2 1 3
4.60 4.00 1.20
Dimensions in mm 2.80 4.50
preferred transport direction during soldering
sot023
Fig 21. Wave soldering footprint SOT23 (TO-236AB)
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
14 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
11. Revision history
Table 10. Revision history Release date 20070227 Data sheet status Product data sheet Change notice Supersedes Document ID PBRN123Y_SER_1
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
15 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
PBRN123Y_SER_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 27 February 2007
16 of 17
NXP Semiconductors
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 10 k
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 February 2007 Document identifier: PBRN123Y_SER_1

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